SIRA20DP www.vishay.com vishay siliconix s16-2083-rev. a, 10-oct-16 1 document number: 76212 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 25 v (d-s) mosfet features ? trenchfet ? gen iv power mosfet ? optimized q g , q gd , and q gd /q gs ratio reduces switching related power loss ? 100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? synchronous rectification ? high power density dc/dc ? synchronous buck converter ?or-ing ? load switching ? battery management notes a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak 1212-8 is a lead less package. the end of th e lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. e. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. f. maximum under steady stat e conditions is 54 c/w. g. t c = 25 c. product summary v ds (v) 25 r ds(on) max. ( ? ) at v gs = 10 v 0.00058 r ds(on) max. ( ? ) at v gs = 4.5 v 0.00082 q g typ. (nc) 61 i d (a) 100 a, g configuration single powerpak ? s o-8 s ingle top view 1 6.15 mm 5.15 mm bottom view 4 g 3 s 2 s 1 s d 8 d 6 d 7 d 5 n-channel mosfet g d s ordering information package powerpak so-8 single lead (pb)-free and halo gen-free SIRA20DP-t1-re3 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 25 v gate-source voltage v gs +16 / -12 continuous drain current (t j = 150 c) t c = 25 c i d 100 a a t c = 70 c 100 a t a = 25 c 81.7 b, c t a = 70 c 65.3 b, c pulsed drain current (t = 100 s) i dm 500 continuous source-drain diode current t c = 25 c i s 94.5 t a = 25 c 5.6 b, c single pulse avalanche current l = 0.1 mh i as 60 single pulse avalanche energy e as 180 mj maximum power dissipation t c = 25 c p d 104 w t c = 70 c 66.6 t a = 25 c 6.25 b, c t a = 70 c 4 b, c operating junction and storage temperature range t j , t stg -55 to +150 c soldering recommendations (peak temperature) c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b t ? 10 s r thja 15 20 c/w maximum junction-to-case (drain) steady state r thjc 0.9 1.2
SIRA20DP www.vishay.com vishay siliconix s16-2083-rev. a, 10-oct-16 2 document number: 76212 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 25 - - v v ds temperature coefficient ? v ds /t j i d = 10 ma - 21 - mv/c v gs(th) temperature coefficient ? v gs(th) /t j i d = 250 a - -4.8 - gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 - 2.1 v gate-source leakage i gss v ds = 0 v, v gs = +16 / -12 v - - 100 na zero gate voltage drain current i dss v ds = 25 v, v gs = 0 v - - 1 a v ds = 25 v, v gs = 0 v, t j = 70 c - - 15 on-state drain current a i d(on) v ds ? 10 v, v gs = 10 v 40 - - a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a - 0.00048 0.00058 ? v gs = 4.5 v, i d = 20 a - 0.00065 0.00082 forward transconductance a g fs v ds = 15 v, i d = 20 a - 110 - s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz - 10 850 - pf output capacitance c oss - 3360 - reverse transfer capacitance c rss - 720 - total gate charge q g v ds = 10 v, v gs = 10 v, i d = 20 a - 134 200 nc v ds = 10 v, v gs = 4.5 v, i d = 20 a -6192 gate-source charge q gs -24- gate-drain charge q gd -9.2- gate resistance r g f = 1 mhz 0.1 0.38 0.75 ? turn-on delay time t d(on) v dd = 10 v, r l = 0.5 ? , i d ? 20 a, v gen = 10 v, r g = 1 ? -1938 ns rise time t r -2448 turn-off delay time t d(off) - 53 105 fall time t f -918 turn-on delay time t d(on) v dd = 10 v, r l = 0.5 ? , i d ? 20 a, v gen = 4.5 v, r g = 1 ? - 51 100 rise time t r - 95 190 turn-off delay time t d(off) -4794 fall time t f -1632 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - - 94.5 a pulse diode forward current i sm - - 300 body diode voltage v sd i s = 5 a, v gs = 0 v - 0.71 1.1 v body diode reverse recovery time t rr i f = 20 a, di/dt = 100 a/s, t j = 25 c - 63 126 ns body diode reverse recovery charge q rr - 87 174 nc reverse recovery fall time t a -27- ns reverse recovery rise time t b -36-
SIRA20DP www.vishay.com vishay siliconix s16-2083-rev. a, 10-oct-16 3 document number: 76212 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate volta g e gate char g e transfer characteristics capacitance on-resistance vs. junction temperature 10 100 1000 10000 0 40 80 120 160 200 00.511.522.5 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 10 v thru 4 v v gs = 3 v v gs = 2 v 10 100 1000 10000 0 0.0002 0.0004 0.0006 0.0008 0.0010 0 20406080100 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 4.5 v v gs = 10 v 10 100 1000 10000 0 2 4 6 8 10 0275481108135 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line v ds = 5 v, 10 v, 15 v i d = 20 a 10 100 1000 10000 0 40 80 120 160 200 012345 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 2400 4800 7200 9600 12000 0 5 10 15 20 25 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss 10 100 1000 10000 0.6 0.8 1.0 1.2 1.4 1.6 -50-25 0 255075100125150 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line i d = 20 a v gs = 10 v v gs = 4.5 v
SIRA20DP www.vishay.com vishay siliconix s16-2083-rev. a, 10-oct-16 4 document number: 76212 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) source-drain diode forward volta g e on-resistance vs. gate-to-source volta g e threshold volta g e sin g le pulse power, junction-to-ambient safe operatin g area, junction-to-ambient 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 10000 0 0.0006 0.0012 0.0018 0.0024 0.0030 0246810 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 125 c 10 100 1000 10000 -1.0 -0.7 -0.4 -0.1 0.2 0.5 -50 -25 0 25 50 75 100 125 150 axis title 1st line 2nd line 2nd line v gs(th) - variance (v) t j - temperature (c) 2nd line i d = 5 ma i d = 250 a 10 100 1000 10000 0 60 120 180 240 300 0.001 0.01 0.1 1 10 axis title 1st line 2nd line 2nd line power (w) time (s) 2nd line 10 100 1000 10000 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) (1) v gs > minimum v gs at which r ds(on) is specified i dm limited limited by r ds(on) (1) t c = 25 c single pulse bvdss limited 100 ms 10 ms 1 ms 100 s dc 10 s 1 s i d limited
SIRA20DP www.vishay.com vishay siliconix s16-2083-rev. a, 10-oct-16 5 document number: 76212 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) current deratin g a power, junction-to-case power, junction-to-ambient note a. the power dissipation p d is based on t j max. = 150 c, using junction-to-ca se thermal resistance, and is mo re useful in se ttling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. 10 100 1000 10000 0 80 160 240 320 400 0 25 50 75 100 125 150 axis title 1st line 2nd line 2nd line i d - drain current (a) t c - case temperature (c) 2nd line package limited 10 100 1000 10000 0 25 50 75 100 125 0 255075100125150 axis title 1st line 2nd line 2nd line power (w) t c - case temperature (c) 2nd line 10 100 1000 10000 0 0.6 1.2 1.8 2.4 3.0 0255075100125150 axis title 1st line 2nd line 2nd line power (w) t a - ambient temperature (c) 2nd line
SIRA20DP www.vishay.com vishay siliconix s16-2083-rev. a, 10-oct-16 6 document number: 76212 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76212 . 10 100 1000 10000 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2 p dm t 1 t 2 1. duty cycle, d = 2. per unit base = r thja = 54 c/w 3. t jm -t a = p dm z thja (t) 4. surface mounted t 1 t 2 notes: 10 100 1000 10000 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2
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